Damage Free Etching for Gate Process of GaAs MESFET by ICP Method
نویسندگان
چکیده
Damage free etching is required for the gate etching process in GaAs IC fabrication. While inductively coupled plasma (ICP) is thought to be the low damage etching technique, the degradation of DC characteristics was observed in our GaAs MESFETs. Threshold voltage shifts and Schottky barrier height is decreased. It was confirmed that the control of the antenna power (i.e. applied power to the upper electrode) is essential to obtain damage free etching by ICP. These properties are different from the case of reactive ion etching. We have successfully realized damage free etching by controlling the antenna power, which offers good uniformity and reproducibility of device characteristics.
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